2SA1620 Просмотр технического описания (PDF) - Toshiba
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2SA1620 Datasheet PDF : 3 Pages
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2SA1620
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1620
Audio Frequency Amplifier Applications
• Complementary to 2SC4209
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
−80
V
−80
V
−5
V
−300
mA
−60
mA
200
mW
150
°C
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
VCB = −50 V, IE = 0
IEBO
VEB = −5 V, IC = 0
V (BR) CEO IC = −5 mA, IB = 0
hFE (1)
(Note)
VCE = −2 V, IC = −50 mA
hFE (2)
VCE (sat)
VBE
fT
Cob
VCE = −2 V, IC = −200 mA
IC = −200 mA, IB = −20 mA
VCE = −2 V, IC = −5 mA
VCE = −10 V, IC = −10 mA
VCB = −10 V, IE = 0, f = 1 MHz
Note: hFE classification O: 70 to 140, Y: 120 to 240
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Min Typ. Max Unit
⎯
⎯ −0.1 μA
⎯
⎯ −0.1 μA
−80 ⎯
⎯
V
70
⎯
240
40
⎯
⎯
⎯
−0.55 ⎯
70 100
⎯
14
⎯
−0.4
V
−0.8
V
⎯ MHz
⎯
pF
Marking
Start of commercial production
1987-05
1
2014-03-01
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