2SA1483-Y Просмотр технического описания (PDF) - Toshiba
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2SA1483-Y Datasheet PDF : 4 Pages
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1483
High Frequency Amplifier Applications
Video Amplifier Applications
High Speed SwitcHing Applications
2SA1483
Unit: mm
• High transition frequency: fT = 200 MHz (typ.)
• Low collector output capacitance: Cob = 3.5 pF (typ.)
• Complementary to 2SC3803
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Continuous base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
−60
V
VCEO
−45
V
VEBO
−5
V
IC
−200
mA
IB
−50
mA
PC
500
PC
mW
1000
(Note 1)
Tj
150
°C
Tstg
−55 to 150
°C
PW-MINI
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-11-09
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