2SA1327 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic

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Компоненты Описание

производитель

2SA1327

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA , IB=0

VCEsat Collector-emitter saturation voltage IC=-8A; IB=-0.4A

VBE

Base-emitter on voltage

IC=-8A ; VCE=-2V

ICBO

Collector cut-off current

VCB=-50V;IE=0

IEBO

Emitter cut-off current

VEB=-8V; IC=0

hFE-1

DC current gain

IC=-1A ; VCE=-2V

hFE -2

DC current gain

IC=-8A ; VCE=-2V

COB

Output capacitance

IE=0 ; VCB=-10V; f=1MHz

fT

Transition frequency

IC=-1A ; VCE=-2V

‹ hFE-1 Classifications

O

Y

100-200

160-320

Product Specification

2SA1327

MIN TYP. MAX UNIT

-20

V

-0.5

V

-1.5

V

-1.0 μA

-1.0 μA

100

320

70

400

pF

45

MHz

2

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