A1280 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic

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производитель

A1280

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ; IB=0

VCEsat Collector-emitter saturation voltage IC=-500mA;IB=-50mA

VBE

Base-emitter on voltage

IC=-50mA ; VCE=-4V

ICBO

Collector cut-off current

VCB=-120V;IE=0

IEBO

Emitter cut-off current

VEB=-6V; IC=0

hFE-1

DC current gain

IC=-50mA ; VCE=-4V

hFE-2

DC current gain

IC=-500mA ; VCE=-10V

fT

Transition frequency

IC=-500mA ; VCE=-10V

COB

Output capacitance

IE=0 ; VCB=-100V;f=1MHz

Product Specification

2SA1280

MIN TYP. MAX UNIT

-150

V

-3.0

V

-1.0

V

-1

μA

-1

μA

60

200

60

4

MHz

30

pF

2

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