A1328 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

A1328

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SA1328

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB=B -0.3A

VBE(sat) Base-Emitter Saturation Voltage

IC= -6A; IB=B -0.3A

ICBO

Collector Cutoff Current

VCB= -60V ; IE= 0

IEBO

Emitter Cutoff Current

VEB= -6V; IC= 0

hFE-1

DC Current Gain

IC= -1A ; VCE= -1V

hFE-2

DC Current Gain

IC= -6A ; VCE= -1V

fT

Current-Gain—Bandwidth Product

IC= -1A ; VCE= -5V

COB

Output Capacitance

Switching Times

IE= 0; VCB= -10V; ftest= 1MHz

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

IC= -3A ,RL= 10Ω,

IB1= -IB2= -0.15A,VCC= -30V

MIN TYP. MAX UNIT

-50

V

-0.4

V

-1.2

V

-10 μA

-10 μA

70

240

40

70

MHz

320

pF

0.3

μs

1.0

μs

0.5

μs

‹ hFE-1 Classifications

O

Y

70-140 120-240

isc Website：www.iscsemi.cn

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