2SA1291 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

2SA1291

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-base breakdown voltage

IC=-1mA ,IE=0

V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,IB=B 0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA ,IC=0

VCE(sat) Collector-emitter saturation voltage IC=-5A; IB=-0.25A

ICBO

Collector cut-off current

VCB=-40V; IE=0

IEBO

Emitter cut-off current

VEB=-4V; IC=0

hFE

DC current gain

IC=-1A ; VCE=-2V

fT

Transition frequency

IC=-1A ; VCE=-5V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=5A IB1=- IB2=0.25A

VCC=20V;RL=6.67Ω

hFE Classifications

Q

R

S

70-140 100-200 140-280

Product Specification

2SA1291

MIN TYP. MAX UNIT

-80

V

-60

V

-5

V

-0.4

V

-100 μA

-100 μA

70

280

100

MHz

0.1

μs

0.5

μs

0.1

μs

2

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