2SA1257 Просмотр технического описания (PDF) - KEXIN Industrial

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Компоненты Описание

производитель

2SA1257

PNP Epitaxial Planar Silicon Transistor

KEXIN Industrial 

SMD Type

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

DC current Gain

Gain bandwidth product

Output capacitance

Base-emitter voltage

Collector-emitter saturation voltage

Collector-to-base breakdown voltage

Collector-to-emitter breakdown voltage

Emitter-base breakdown voltage

Turn-on time

Storage time

Fall time

2SA1257

Symbol

Testconditons

IcBO VCB = -120V , IE = 0

IEBO VEB = -4V , IC = 0

hFE VCE = -5V , IC = -10 mA

fT VCE = -10V , IC = -10 mA

Cob VCB = -10V , f = 1MHz

VBE VCE = -5V , IC = -10 mA

VCE(sat) IC = -30mA , IB = -3mA

V(BR)CBO IC = -10ìA , IE = 0

V(BR)CEO IC = -1mA , RBE =

V(BR)EBO IE = -10ìA , IC = 0

ton

tstg

tf

hFE Classification

Rank

hFE

G3

60 120

G4

90 180

G5

135 270

Transistors

Min Typ Max Unit

-0.1 ìA

-0.1 ìA

60

270

130

MHz

2.4 3.2 pF

-1.5 V

-0.7 V

-180

V

-160

V

-5

V

0.15

ìs

0.95

ìs

0.15

ìs

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