2SA1235 Просмотр технического описания (PDF) - KEXIN Industrial

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производитель

2SA1235

Silicon PNP Epitaxial Transistor

KEXIN Industrial 

SMD Type

TransistIoCrs

Silicon PNP Epitaxial

2SA1235

Features

Small collector to emitter saturation voltage.

Excelent lineary DC forward current gain.

Super mini package for easy mounting.

SOT-23

2.9+0.1

-0.1

0.4+0.1

-0.1

3

1

2

0.95+0.1

-0.1

1.9+0.1

-0.1

Unit: mm

0.1+0.05

-0.01

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector dissipation (Ta=25 )

Jumction temperature

Storage temperature

Symbol

Rating

Unit

VCBO

-50

V

VCEO

-50

V

VEBO

-6

V

IC

-200

mA

PC

150

mW

Tj

125

Tstg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Collector-emitter breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current gain

Collector-emitter saturation voltage

Current gain bandwidth product

Collector output capacitance

Noise figure

Symbol

Testconditons

Min Typ Max Unit

V(BR)CEO IC = -100ìA , RBE =

-50

V

ICBO ICB = -50V , IE = 0

-0.1 ìA

IEBO VEB = -6V , IC = 0

-0.1 ìA

hFE VCE = -6V , IC = -1mA

150

800

VCE(sat) IC = -100mA , IB = -10mA

-0.3 V

fT VCE = -6V , IE = 10mA

200

MHz

Cob VCB = -6V , IE = 0 , f = 1MHz

4.0

pF

NF

VCB = -6V , IE = 0.3mA , f = 100Hz , RG

= 10KÙ

20 dB

hFE Classification

Marking

hFE

ME

150 300

MF

250 500

MG

400 800

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