2SA1283 Просмотр технического описания (PDF) - Transys Electronics Limited

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2SA1283

TO-92MOD Plastic-Encapsulated Transistors

Transys Electronics Limited 

Transys

Electronics

LIMITED

TO-92MOD Plastic-Encapsulated Transistors

2SA1283 TRANSISTOR (PNP)

FEATURE

Power dissipation

PCM : 0.9 W (Tamb=25℃)

Collector current

ICM : -1 A

Collector-base voltage

V(BR)CBO : -60 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

TO-92MOD

1. EMITTER

2. COLLECTOR

3. BASE

123

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

Collector-base breakdown voltage

V(BR)CBO

Ic= -10µA , IE=0

-60

Collector-emitter breakdown voltage

V(BR)CEO

IC=-2mA , IB=0

-60

Emitter-base breakdown voltage

V(BR)EBO

IE= -10µA, IC=0

-6

Collector cut-off current

ICBO

VCB= -50 V, IE=0

Emitter cut-off current

IEBO

VEB= -4 V, IC=0

DC current gain

hFE

VCE=-4 V, IC= -100mA

55

Collector-emitter saturation voltage

VCEsat

IC= -500 mA, IB=-25 mA

MAX

-0.2

-0.2

300

-0.3

Transition frequency

fT

VCE=-2V, IC= -10mA

50

Output capacitance

Cob

VCE=-10V, IE=0,f=1 MHz

25

UNIT

V

V

V

µA

µA

V

MHz

pF

CLASSIFICATION OF hFE

Rank

Range

C

55-110

D

90-180

E

150-300

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