A1244-O Просмотр технического описания (PDF) - Toshiba

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A1244-O

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

Toshiba 

2SA1244

Electrical Characteristics (Ta = 25°C)

Characteristics

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

Test Condition

ICBO

VCB = −50 V, IE = 0

IEBO

VEB = −5 V, IC = 0

V (BR) CEO IC = −10 mA, IB = 0

hFE (1)

(Note)

VCE = −1 V, IC = −1 A

hFE (2) VCE = −1 V, IC = −3 A

VCE (sat) IC = −3 A, IB = −0.15 A

VBE (sat) IC = −3 A, IB = −0.15 A

fT

VCE = −4 V, IC = −1 A

Cob

VCB = −10 V, IE = 0, f = 1 MHz

Min Typ. Max Unit

―

―

−1

μA

―

―

−1

μA

−50 ―

―

V

70

―

240

30

―

―

― −0.2 −0.4

V

― −0.9 −1.2

V

―

60

― MHz

― 170 ―

pF

Turn-on time

Switching time Storage time

ton

OUTPUT ―

0.1

―

20 μs INPUT IB2

tstg

IB2

IB1

―

1.0

―

μs

VCC = −30 V

Fall time

tf

IB1 = 0.15 A, IB2 = 0.15 A

DUTY CYCLE ≤ 1%

Note: hFE (1) classification O: 70 to 140, Y: 120 to 240

Marking

―

0.1

―

A1244

Part No. (or abbreviation code)

Lot No.

Characteristics

indicator

Note 1

Note 1:

A line under a Lot No. identifies the indication of product Labels.

Not underlined: [[Pb]]/INCLUDES > MCV

Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to environmental matters such as the

RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and

of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in

electrical and electronic equipment.

2

2010-08-27

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