A1244-Y(2002) Просмотр технического описания (PDF) - Toshiba
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| A1244-Y Datasheet PDF : 0 Pages | |||
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1244
High Current Switching Applications
2SA1244
Unit: mm
· Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A)
· High speed switching time: tstg = 1.0 µs (typ.)
· Complementary to 2SC3074
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
Unit
−60
V
−50
V
−5
V
−5
A
−1
A
1.0
W
20
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
1
2002-07-23
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