−8
−120
−150
−100
IC – VCE
Common emitter
Tc = 25°C
−6
−70
−50
−4
−30
−20
IB = −10 mA
−2
0
0
0
−2
−4
−6
−8
−10
Collector-emitter voltage VCE (V)
2SA1242
1000
500
300
hFE – IC
Tc = 100°C
25
100
−25
50
30
Common emitter
VCE = −2 V
10
−0.01 −0.03 −0.1 −0.3
−1
−3
−10
Collector current IC (A)
VCE (sat) – IC
−3
Common emitter
IC/IB = 40
−1
−0.5
−0.3
Tc = 100°C
25
−25
−0.1
−0.05
−0.03
−0.01 −0.03 −0.1 −0.3
−1
−3
−10
Collector current IC (A)
Safe Operating Area
−10 IC max (pulsed)**
IC max (continuous)
−5
−3
DC operation
Tc = 25°C
1 ms*
10 ms*
100 ms*
−1
* : Single nonrepetitive pulse
−0.5
Tc = 25°C
−0.3 ** : Pulse width = 10 ms (max)
Duty cycle = 30% (max)
Curves must be derated linearly
with increase in temperature.
−0.1
−0.3
−1
−3
VCEO max
−10
−30
Collector-emitter voltage VCE (V)
VBE – IC
−8
Common emitter
VCE = −2 V
−6
−4
Tc = 100°C
25
−25
−2
0
0
−0.4
−0.8
−1.2
−1.6
−2.0
Base-emitter voltage VBE (V)
12
(1)
10
8
PC – Ta
(1) Tc = Ta infinite heat sink
(2) Ceramic substrate
50 × 50 × 0.8 mm
(3) No heat sink
6
4
(2)
2
(3)
0
0
25
50
75 100 125 150 175
Ambient temperature Ta (°C)
3
2010-02-05