2SA1242 Просмотр технического описания (PDF) - Toshiba

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2SA1242

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

ICBO

VCB = −35 V, IE = 0

IEBO

VEB = −8 V, IC = 0

VCEO

IC = −10 mA, IB = 0

VEBO

IE = −1 mA, IC = 0

hFE (1)

(Note 3)

VCE = −2 V, IC = −0.5 A

hFE (2) VCE = −2 V, IC = −4 A

VCE (sat) IC = −4 A, IB = −0.1 A

VBE

VCE = −2 V, IC = −4 A

fT

VCE = −2 V, IC = −0.5 A

Cob

VCB = −10 V, IE = 0, f = 1 MHz

Note 3: hFE (1) classification O: 100 to 200, Y: 160 to 320

Marking

2SA1242

Min Typ. Max Unit

―

― −100 nA

―

― −100 nA

−20 ―

―

V

−8

―

―

V

100

―

320

70

―

―

―

―

−1.0

V

―

―

−1.5

V

― 170 ― MHz

―

62

―

pF

A1242

Part No. (or abbreviation code)

Lot No.

Characteristics

indicator

Note 4

Note 4:

A line under a Lot No. identifies the indication of product Labels.

Not underlined: [[Pb]]/INCLUDES > MCV

Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to environmental matters such as the

RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and

of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in

electrical and electronic equipment.

2

2010-02-05

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