A1106 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic

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производитель

A1106

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A

VBEsat Base-emitter saturation voltage

IC=-5A; IB=-0.5A

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

hFE

DC current gain

VCB=-140V; IE=0

VEB=-6V; IC=0

IC=-5A ; VCE=4V

fT

Transition frequency

IE=1A ; VCE=-12V

Product Specification

2SA1106

MIN TYP. MAX UNIT

-140

V

-1.5

V

-1.8

V

-100 μA

-100 μA

50

180

20

MHz

2

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