JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0
V(BR)CBO Collector-base breakdown voltage IC=-0.1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-0.1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-15A; IB=-1.5A
VBEsat Base-emitter saturation voltage
IC=-15A; IB=-1.5A
ICBO
Collector cut-off current
VCB=-70V; IE=0
IEBO
Emitter cut-off current
VEB=-7V; IC=0
hFE
DC current gain
IC=-3A ; VCE=-5V
COB
Output capacitance
IE=0 ; VCB=-10V;f=1.0MHz
fT
Transition frequency
IC=-2A ; VCE=-10V
Product Specification
2SA1044
MIN TYP. MAX UNIT
-70
V
-70
V
-7
V
-1.5
V
-2.0
V
-50 μA
-50 μA
35
200
700
pF
60
MHz
2