A1129 Просмотр технического описания (PDF) - Inchange Semiconductor
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A1129 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1129
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·Large current capacity
·Complement to type 2SC2654
APPLICATIONS
·For low-frequency power amplifiers
and mid-speed switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
IBB
Base current
PT
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
Ta=25℃
VALUE
-30
-30
-7
-7
-15
-3.5
40
1.5
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
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