2SA1109 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SA1109 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-5A ;IB=B -0.5A
VBE
Base-emitter on voltage
IC=-5A;VCE=-5V
ICBO
Collector cut-off current
VCB=-180V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-2A ; VCE=-5V
hFE-2
DC current gain
IC=-5A ; VCE=-5V
fT
Transition frequency
IC=-0.5A ; VCE=-5V
Product Specification
2SA1109
MIN TYP. MAX UNIT
-180
V
-2.0
V
-1.5
V
-0.1 mA
-0.1 mA
50
160
30
60
MHz
2
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