2N7370 Просмотр технического описания (PDF) - Microsemi Corporation

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2N7370

NPN DARLINGTON HIGH POWER SILICON TRANSISTOR

Microsemi Corporation 

2N7370 JAN SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics

ON CHARACTERISTICS (2)

Forward-Current Transfer Ratio

IC = 6.0 Adc, VCE = 3.0 Vdc

IC = 12 Adc, VCE = 3.0 Vdc

Collector-Emitter Saturation Voltage

IC = 12 Adc, IB = 120 mAdc

Base-Emitter Saturation Voltage

IC = 12 Adc, IB = 120 mAdc

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter Small-Signal Short-Circuit

Forward Current Transfer Ratio

IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz

SWITCHING CHARACTERISTICS

Turn-On Time

VCC = 30 Vdc; IC = 12 Adc; IB1 = 120 mAdc

Turn-Off Time

VCC = 30 Vdc; IC = 12 Adc; IB1 = IB2 = 120 mAdc

SAFE OPERATING AREA

DC Tests

TC = +250C, 1 Cycle, t ≥ 1.0 s

Test 1

VCE = 8.3 Vdc, IC = 12 Adc

Test 2

VCE = 30 Vdc, IC = 3.3 Adc

Test 3

VCE = 90 Vdc, IC = 150 mAdc

(2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.

Symbol

hFE

VCE(sat)

VBE(sat)

hfe

ton

toff

Min. Max. Unit

1,000 18,000

150

3.0

Vdc

4.0

Vdc

10

250

2.0

µs

10

µs

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

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