2N7002BKMB Просмотр технического описания (PDF) - NXP Semiconductors.
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2N7002BKMB Datasheet PDF : 15 Pages
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NXP Semiconductors
2N7002BKMB
60 V, single N-channel Trench MOSFET
1.0
ID
(A)
0.8
0.6
0.4
0.2
017aaa043
(1) (2)
2.4
a
1.8
1.2
0.6
aaa-002591
0.0
0.0
1.0
2.0
3.0
4.0
5.0
VGS (V)
VDS > ID x RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0.0
-60
0
60
120
180
Tj (°C)
Fig 12. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
3.0
VGS(th)
(V)
2.0
1.0
aaa-002592
(1)
(2)
(3)
102
(1)
C
(pF)
(2)
10
(3)
017aaa046
0.0
-60
0
60
120
180
Tj (°C)
ID = 0.25 A; VDS = VGS
(1) maximum values
(2) typical values
(3) minimum values
Fig 13. Gate-source threshold voltage as a function of
junction temperature
1
10−1
1
10
102
VDS (V)
f = 1 MHz; VGS = 0 V
(1) Ciss
(2) Coss
(3) Crss
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
2N7002BKMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 13 June 2012
© NXP B.V. 2012. All rights reserved.
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