2N7002BKMB Просмотр технического описания (PDF) - NXP Semiconductors.
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2N7002BKMB Datasheet PDF : 15 Pages
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NXP Semiconductors
2N7002BKMB
60 V, single N-channel Trench MOSFET
0.7
ID VGS = 4.0 V
(A)
0.6
0.5
0.4
0.3
0.2
0.1
3.5 V
017aaa039
3.25 V
3.0 V
2.75 V
2.5 V
10−3
ID
(A)
10−4
10−5
017aaa040
(1)
(2)
(3)
0.0
0.0
1.0
2.0
3.0
4.0
VDS (V)
Tj = 25 °C
Fig 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
10−6
0.0
1.0
Tj = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
2.0
3.0
VGS (V)
Fig 8. Sub-threshold drain current as a function of
gate-source voltage
6.0
RDSon
(Ω)
4.0
017aaa041
(1)
(2)
6.0
RDSon
(Ω)
4.0
017aaa042
(3)
(1)
2.0
(4)
2.0
(2)
(5)
0.0
0.0
0.2
0.4
0.6
0.8
1.0
ID (A)
Tj = 25 °C
(1) VGS = 3.25 V
(2) VGS = 3.5 V
(3) VGS = 4 V
(4) VGS = 5 V
(5) VGS = 10 V
Fig 9. Drain-source on-state resistance as a function
of drain current; typical values
0.0
0.0
2.0
4.0
6.0
8.0
10.0
VGS (V)
ID = 500 mA
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
2N7002BKMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 13 June 2012
© NXP B.V. 2012. All rights reserved.
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