2N7002BKMB Просмотр технического описания (PDF) - NXP Semiconductors.
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2N7002BKMB Datasheet PDF : 15 Pages
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NXP Semiconductors
2N7002BKMB
60 V, single N-channel Trench MOSFET
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
ID
IDM
Ptot
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
Conditions
Tj = 25 °C
VGS = 10 V; Tamb = 25 °C
[1]
VGS = 10 V; Tamb = 100 °C
[1]
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
[2]
[1]
Tsp = 25 °C
Tj
junction temperature
Tamb
ambient temperature
Tstg
storage temperature
Source-drain diode
IS
source current
Tamb = 25 °C
[1]
ESD maximum rating
VESD
electrostatic discharge voltage HBM
[3]
Min Max Unit
-
60 V
-20 20 V
-
450 mA
-
220 mA
-
1.8 A
-
360 mW
-
715 mW
-
2700 mW
-55 150 °C
-55 150 °C
-65 150 °C
-
450 mA
-
2000 V
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
120
Pder
(%)
80
001aao121
120
Ider
(%)
80
001aao122
40
40
0
-75
-25
25
75
125
175
Tj (°C)
0
-75
-25
25
75
125
175
Tj (°C)
Fig 2. Normalized total power dissipation as a
function of junction temperature
Fig 3. Normalized continuous drain current as a
function of junction temperature
2N7002BKMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 13 June 2012
© NXP B.V. 2012. All rights reserved.
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