2N7002L(2005) Просмотр технического описания (PDF) - Unisonic Technologies
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производитель
2N7002L Datasheet PDF : 6 Pages
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2N7002
TYPICAL CHARACTERICS
2
VGS=10V
9.0V 8.0V
7.0V
1.5
6.0V
1
0.5
0
0
5.0V
4.0V
3.0V
1
2
3
4
5
DRAIN - SOURCE VOLTAGE, VDS (V)
Figure 3. On-Region Characteristics
2
VGS=10V
1.75 ID=500mA
1.5
1.25
1
0.75
0.5
-50 -25 0
25 50 75 100 125 150
JUCTION TEMPERATURE, TJ (°C)
Figure 5. On-Resistance Varisation
with Temperature
2
VDS=10V
1.6
1.8
1.2
25℃
125℃
0.4
0
0
2
4
6
8
10
GATE TO SOURCE VOLTAGE , VGS (V)
Figure 7. Transfer Characteristics
MOSFET
3
VGS=4.0V 4.5V
2.5
5.0V
2
1.5
1
6.0V
7.0V
8.0V
9.0V
10V
0.5
0
0.4
0 .8
1.2
1.6
2
DRAIN CURRENT, ID (A)
Figure 4. On-Resistance Varisation with Gate
Voltage and Drain Current
3
2.5
VGS=10V
TJ =125℃
2
1.5
25℃
1
0.5
0
0
0.4
0.8
1.2
1.6
2
DRAIN CURRENT,ID (A)
Figure 6. On-Resistance Varisation with Drain
Current and Temperature
1.1
1.05
VGS = VDS
ID = 1mA
1
0.95
0.9
0.85
0.8
-50 -25 0 25 50 75 100 125 150
JUCTION TEMPERATURE, TJ (°C)
Figure 8. Gate Threshold Varisation
with Temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4
QW-R206-037,B
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