2N7002G-AE2-R(2011) Просмотр технического описания (PDF) - Unisonic Technologies

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Компоненты Описание

производитель

2N7002G-AE2-R
(Rev.:2011)

0.3 Amps, 60 Volts N-CHANNEL POWER MOSFET

Unisonic Technologies 

2N7002

„ TYPICAL CHARACTERICS (Cont.)

1.1

1.075

Breakdown Voltage Varisation

with Temperature

ID = 250μA

1.05

1.025

1

0.975

0.95

0.925

-50

-25 0 25 50 75 100 125 150

Junction Temperature, TJ (°C)

Power MOSFET

Body Diode Forward Voltage Varisation

with Temperature

2

1 VGS=0V

0.5

TJ =125℃

0.1

25℃

0.05

0.01

0.005

0.001

0.2

0.4 0.6 0.8

1 1.2 1.4

Body Diode Forward Voltage, VSD (V)

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R206-037,I

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