2N7002G-AE2-R(2011) Просмотр технического описания (PDF) - Unisonic Technologies

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Компоненты Описание

производитель

2N7002G-AE2-R
(Rev.:2011)

0.3 Amps, 60 Volts N-CHANNEL POWER MOSFET

Unisonic Technologies 

2N7002

„ TYPICAL CHARACTERISTICS

Power MOSFET

On-Resistance Varisation with Temperature

2

VGS=10V

ID=500mA

1.75

1.5

1.25

1

0.75

0.5

-50 -25 0

25 50 75 100 125 150

Junction Temperature, TJ (°C)

Transfer Characteristics

2

VDS=10V

25℃

125℃

1.6

1.8

1.2

0.4

0

0

2

4

6

8

10

Gate to Source Voltage, VGS (V)

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

On-Resistance Varisation with Drain

Current and Temperature

3

2.5

VGS=10V

TJ =125℃

2

1.5

1

0.5

0

0

25℃

0.4

0.8

1.2

1.6

2

Drain Current,ID (A)

1.1

1.05

Gate Threshold Varisation with Temperature

VGS = VDS

ID = 1mA

1

0.95

0.9

0.85

0.8

-50

-25 0 25 50 75 100 125 150

Junction Temperature, TJ (°C)

4 of 6

QW-R206-037,I

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