2N6790 Просмотр технического описания (PDF) - Fairchild Semiconductor

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производитель

2N6790

3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET

Fairchild Semiconductor 

2N6790

Typical Performance Curves Unless Otherwise Specified (Continued)

5.0

80µs PULSE TEST

4.25

3.75

3.0

2.25

1.50

TJ = -55oC

TJ = 25oC

TJ = 125oC

0.75

0

0

2

4

6

8

10

12

14

ID, DRAIN CURRENT (A)

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT

102

TJ = 25oC

TJ = 150oC

10

TJ = 150oC

TJ = 25oC

1

0

1

2

3

4

VSD, SOURCE TO DRAIN VOLTAGE (V)

FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

20

ID = 7A

15

10

VDS = 160V

VDS = 100V

VDS = 40V

5

0

0

4

8

12

16

20

Qg, TOTAL GATE CHARGE (nC)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

©2001 Fairchild Semiconductor Corporation

2N6790 Rev. B

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