2N6790 Просмотр технического описания (PDF) - Fairchild Semiconductor
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2N6790 Datasheet PDF : 7 Pages
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2N6790
Typical Performance Curves Unless Otherwise Specified (Continued)
12
80µs PULSE TEST
8
10V
9V
8V
VGS = 7V
6V
4
5V
4V
0
0
2
4
6
8
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
16
VDS > ID(ON) x rDS(ON) MAX
80µs PULSE TEST
12
8
4
25oC
-55oC
125oC
0
2
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
1.5
PULSE DURATION = 2.0µs
INITIAL TJ = 25oC
VGS = 10V
1.0
0.5
VGS = 20V
0
0
5
10
15
20
ID, DRAIN CURRENT (A)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
2.2
ID = 2A
VGS = 10V
1.8
1.4
1.0
0.6
0.2
-40
0
40
80
120
150
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.25
1.15
1.05
0.95
0.85
0.75
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
1000
800
600
400
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS = CDS + CGD
CISS
200
COSS
CRSS
0
0
10
20
30
40
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
2N6790 Rev. B
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