2N6495 Просмотр технического описания (PDF) - Inchange Semiconductor
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производитель
2N6495 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ; IB=0
VCEsat Collector-emitter saturation voltage IC=10A; IB=1A
VBEsat Base-emitter saturation voltage
IC=10A; IB=1A
VBE
Base -emitter on voltage
ICEV
Collector cut-off current
ICEO
Collector cut-off current
IC=10A ; VCE=3V
VCE=150V;VBE(off)=-1.5V
TC=150℃
VCE=40V; IB=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=10A ; VCE=3V
fT
Transition frequency
IC=1 A ; VCE=10V
Product Specification
2N6495
MIN TYP. MAX UNIT
80
V
1.5
V
2.0
V
2.8
V
0.1
1.0
mA
0.1
mA
0.1
mA
10
60
25
MHz
2
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