2N6495 Просмотр технического описания (PDF) - Inchange Semiconductor
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2N6495 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6495
DESCRIPTION
·With TO-66 package
·Low collector saturation voltage
·Excellent safe operating area
APPLICATIONS
·Designed for switching and wide-
band amplifier applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
150
80
7
10
70
150
-65~200
UNIT
V
V
V
A
W
℃
℃
MAX
4.37
UNIT
℃/W
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