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Номер в каталоге
Компоненты Описание
2N6326 Просмотр технического описания (PDF) - Inchange Semiconductor
Номер в каталоге
Компоненты Описание
производитель
2N6326
Silicon NPN Power Transistors
Inchange Semiconductor
2N6326 Datasheet PDF : 3 Pages
1
2
3
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6326 2N6327 2N6328
CHARACTERISTICS
Tj=25
℃
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N6326
2N6327 I
C
=0.2 A ;I
B
=0
2N6328
V
CEsat
Collector-emitter saturation voltage I
C
=15A; I
B
=1.5A
V
BEsat
Base-emitter saturation voltage
I
C
=15A; I
B
=1.5A
V
BE
Base-emitter on voltage
I
C
=8A ; V
CE
=4V
2N6326
V
CB
=60V; I
E
=0
T
C
=150
℃
I
CBO
Collector cut-off current 2N6327
V
CB
=80V; I
E
=0
T
C
=150
℃
2N6328
V
CB
=100V; I
E
=0
T
C
=150
℃
I
EBO
Emitter cut-off current
V
EB
=4V; I
C
=0
h
FE-1
DC current gain
I
C
=8A ; V
CE
=4V
h
FE-2
DC current gain
I
C
=30A ; V
CE
=4V
f
T
Transition frequency
I
C
=1A ; V
CE
=10V;f=1.0MHz
MIN TYP. MAX UNIT
60
80
V
100
1.2
V
1.5
V
1.5
V
1.0
5.0
1.0
5.0
mA
1.0
5.0
1.0 mA
25
6
30
3
MHz
2
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