2N6257 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

2N6257

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0

VCEsat-1 Collector-emitter saturation voltge IC=8A ;IB=0.8A

VCEsat-2 Collector-emitter saturation voltge IC=20A ;IB=4A

ICEO

Collector cut-off current

ICEV

Collector cut-off current

ICBO

Collector cut-off current

VCE=40V; IB=0

VCE=50V; VBE(off)=1.5V

TC=150℃

VCB=50V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=8A ; VCE=4V

hFE-2

DC current gain

IC=20A ; VCE=4V

fT

Transition frequency

IC=1A;VCE=10V

Product Specification

2N6257

MIN TYP. MAX UNIT

40

V

1.5

V

4.0

V

1.0

mA

0.1

5.0

mA

0.1

mA

0.1

mA

15

75

5

0.8

MHz

2

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