2N6056 Просмотр технического описания (PDF) - Inchange Semiconductor
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производитель
2N6056 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tm=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6055
2N6056
IC=0.1 A ;IB=0
VCEsat-1 Collector-emitter saturation voltge
IC=4A ;IB=16mA
VCEsat-2 Collector-emitter saturation voltage IC=8A ;IB=80mA
VBEsat Base-emitter saturation voltage
IC=8A ;IB=80mA
VBE
Base-emitter on voltage
IC=4A ; VCE=3V
2N6055 VCE=30V; IB=0
ICEO
Collector cut-off current
2N6056 VCE=40V; IB=0
2N6055
VCE=60V; VBE(off)=1.5V
TC=150℃
ICEX
Collector cut-off current
2N6056
VCE=80V; VBE(off)=1.5V
TC=150℃
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=4A ; VCE=3V
hFE-2
DC current gain
IC=8A ; VCE=3V
Cob
Output capacitance
IE=0;VCB=10V;f=0.1MHz
Product Specification
2N6055 2N6056
MIN TYP. MAX UNIT
60
V
80
2.0
V
3.0
V
4.0
V
2.8
V
0.5 mA
0.5
5.0
mA
0.5
5.0
2.0 mA
750
18000
100
220
pF
2
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