2N5867 Просмотр технического описания (PDF) - Inchange Semiconductor
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2N5867 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N5867 2N5868
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
APPLICATIONS
·For medium-speed switching and
amplifier applications
PINNING
PIN
1
DESCRIPTION
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2N5867
2N5868
Open emitter
VCEO
Collector-emitter voltage
2N5867
2N5868
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current
PD
Total Power Dissipation
TC=25℃
Tj
Junction temperature
Tstg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-60
-80
-60
-80
-5
-5
87.5
150
-65~200
UNIT
V
V
V
A
W
℃
℃
VALUE
1.17
UNIT
℃/W
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