2N60-TA3-R Просмотр технического описания (PDF) - Unisonic Technologies
Номер в каталоге
Компоненты Описание
производитель
2N60-TA3-R Datasheet PDF : 8 Pages
| |||
2N60
TYPICAL CHARACTERISTICS(Cont.)
Breakdown Voltage vs. Temperature
1.2
VGS=10V
ID=250μA
1.1
1.0
0.9
0.8
-100 -50 0
50 100 150 200
Junction Temperature, TJ (℃)
Max. Safe Operating Area
Operation in This Area
is Limited by RDS(on)
101
100μs 10μs
1ms
100
10m
Ds
C
10-1 TC=25℃
TJ=125℃
Single Pulse
10-2
100
101
102
103
Drain-Source Voltage, VDS (V)
Thermal Response
D=0.5
100
0.2
0.1
0.05
θJC (t) = 2.78℃/W Max.
Duty Factor, D=t1/t2
TJM -TC=PDM×θJC (t)
10-1 0.02
0.01
Single pulse
PDM
t1
t2
10-5 10-4 10-3 10-2 10-1 100 101
Square Wave Pulse Duration, t1 (s)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Power MOSFET
On -Resistance vs. Temperature
3.0 VGS=10V
ID=4.05A
2.5
2.0
1.5
1.0
0.5
0.0
-100 -50 0
50 100 150 200
Junction Temperature, TJ (℃)
Max. Drain Current vs. Case Temperature
2.0
1.5
1.0
0.5
0.0
25
50
75
100 125 150
Case Temperature, TC (℃)
7 of 8
QW-R502-053,E
Share Link: 