2N5664 Просмотр технического описания (PDF) - SavantIC Semiconductor

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Компоненты Описание

производитель

2N5664

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2N5664 2N5665

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO

Collector-emitter

breakdown voltage

2N5664

2N5665

IC=10mA ; IB=0

V(BR)EBO

VCEsat-1

VCEsat-2

VBEsat-1

VBEsat-2

ICES

ICBO

hFE-1

Emitter-base breakdown voltage

IE=10µA ; IC=0

Collector-emitter

saturation voltage

2N5664

2N5665

IC=3A; IB=0.3A

IC=3A; IB=0.6A

Collector-emitter saturation voltage IC=5A; IB=1A

Base-emitter saturation 2N5664

voltage

2N5665

IC=3A; IB=0.3A

IC=3A; IB=0.6A

Base-emitter saturation voltage

IC=5A; IB=1A

2N5664

Collector cut-off current

2N5665

VCE=200V;VBE(off)=1.5V

VCE=300V;VBE(off)=1.5V

2N5664

Collector cut-off current

2N5665

VCB=250V; IE=0

VCB=400V; IE=0

DC current gain

2N5664

2N5665

IC=0.5A ; VCE=2V

hFE-2

DC current gain

2N5664

2N5665

IC=1A ; VCE=5V

hFE-3

DC current gain

2N5664

2N5665

IC=3A ; VCE=5V

hFE-4

COB

ton

DC current gain

Output capacitance

Turn-on time

toff

Turn-off time

2N5664

2N5665

IC=5A ; VCE=5V

IE=0 ; VCB=10V;f=1MHz

VCC=30V;IC=1A;IB1=-IB2=30mA

VCC=30V;IC=1A;IB1=-IB2=50mA

MIN TYP. MAX UNIT

200

V

300

6

V

0.4

V

1.0

V

1.2

V

1.5

V

0.2 mA

1.0 mA

40

25

40

120

25

75

15

10

5

120

pF

0.25 µs

1.5

µs

2.0

2

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