2N5633 Просмотр технического описания (PDF) - Inchange Semiconductor
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производитель
2N5633 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5632 2N5633 2N5634
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
2N5632
100
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5633 IC=0.2A ;IB=0
120
V
2N5634
140
VCEsat-1 Collector-emitter saturation voltage IC=7A; IB=0.7A
1.0
V
VCEsat-2 Collector-emitter saturation voltage IC=10A ;IB=2A
3.0
V
VBEsat Base-emitter saturation voltage
IC=10A ;IB=2A
2.5
V
VBE
Base-emitter on voltage
IC=5A ; VCE=5V
1.5
V
2N5632 VCE=50V; IB=0
ICEO
Collector cut-off current 2N5633 VCE=60V; IB=0
1.0
mA
体2N5634 VCE=70V; IB=0
固I电NC半H导ANGE SEMICONDUCTOR ICEV
Collector cut-off current
VCE=ratedVCB; VBE(off)=1.5V
TC=150℃
IEBO
Emitter cut-off current
VEB=7V; IC=0
2N5632
25
hFE
DC current gain
2N5633 IC=5A ; VCE=5V
20
1.0
5.0
mA
1.0
mA
100
80
2N5634
15
60
fT
Transition frequency
IC=1A ; VCE=20V
1.0
MHz
2
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