2N5620 Просмотр технического описания (PDF) - Inchange Semiconductor
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2N5620 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors 2N5614 2N5616 2N5618 2N5620
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5614
2N5616/5618 IC=50mA ;IB=0
2N5620
VCEsat Collector-emitter saturation voltage
IC=1A; IB=0.1A
VBE
Base-emitter on voltage
IC=2.5A ; VCE=5V
ICBO
Collector cut-off current
VCB=Rated VCBO; IE=0
ICEO
Collector cut-off current
VCE= Rated VCEO,IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
2N5614/5618
2N5616/5620
IC=2.5A ; VCE=5V
2N5614/5618
fT
Transition frequency
IC=0.5A ; VCE=10V
2N5616/5620
MIN TYP. MAX UNIT
60
80
V
100
0.5
V
1.5
V
0.1 mA
1.0 mA
0.1 mA
70
200
30
90
70
MHz
60
2
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