IRFD210 Просмотр технического описания (PDF) - Intersil
Номер в каталоге
Компоненты Описание
производитель
IRFD210 Datasheet PDF : 6 Pages
| |||
IRFD210
Typical Performance Curves Unless Otherwise Specified (Continued)
5
PDUU8LT0SµYsECPDYUUCLRLSEAET=ITO0EN.S5%T=
80µs
MAX
4
3
2
VGS = 10V
VGS = 9V
VGS = 8V
VGS = 7V
VGS = 6V
5 VDS > ID(ON) x rDS(ON)MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
4
TJ = -55oC
TJ = 25oC
3
TJ = 125oC
2
1
VGS = 5V
VGS = 4V
0
0
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. SATURATION CHARACTERISTICS
1
0
0
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 6. TRANSFER CHARACTERISTICS
4
2µs PULSE TEST
3
2
VGS = 10V
1
VGS = 20V
0
0
2
4
6
8
10
ID, DRAIN CURRENT (A)
NOTE: Heating effect of 2µs pulse is minimal.
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
PULSE DURATION = 80µs
2.2 DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 0.3A
1.8
1.4
1.0
0.6
0.2
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.25
ID = 250µA
1.15
1.05
500
VGS = 0V, f = 1MHz
CISS = CGS + CGD
400
CRSS
COSS
=
≈
CGD
CDS
+
CGD
300
0.95
0.85
0.75
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
200
100
00
CISS
COSS
CRSS
10
20
30
40
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
4-284
Share Link: 