IRFD210 Просмотр технического описания (PDF) - Intersil
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IRFD210 Datasheet PDF : 6 Pages
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IRFD210
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRFD210
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor (See Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200
200
0.6
2.5
±20
1.0
0.008
V
V
A
A
V
W
W/oC
Single Pulse Avalanche Energy Rating (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
30
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
BVDSS ID = 250µA, VGS = 0V (Figure 9)
200
VGS(TH) VGS = VDS, ID = 250µA
2.0
IDSS VDS = Rated BVDSS, VGS = 0V
-
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
-
On-State Drain Current (Note 2)
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
0.6
Gate to Source Leakage
IGSS VGS = ±20V
-
Drain to Source On Resistance (Note 2) rDS(ON) ID = 0.3A, VGS = 10V (Figures 7, 8)
-
Forward Transconductance (Note 2)
gfs
VDS > ID(ON) x rDS(ON)MAX, ID = 0.3A (Figure 11)
0.5
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
td(ON) VDD = 0.5 x Rated BVDSS, ID ≈ 0.6A, RL = 9.1Ω
-
tr
RL = 165Ω for BVDSS = 200V
MOSFET Switching Times are Essentially
-
td(OFF) Independent of Operating Temperature
-
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
tf
-
Qg(TOT) VGS = 10V, ID ≈ 0.6A, VDS = 0.8 x Rated BVDSS
-
Ig(REF) = 1.5mA (Figure 13)
Qgs
Gate Charge is Essentially Independent of Operating
Temperature
-
Qgd
-
Input Capacitance
CISS VGS = 0V, VDS = 25V, f = 1MHz (Figure 10)
-
Output Capacitance
COSS
-
Reverse Transfer Capacitance
CRSS
-
Internal Drain Inductance
Internal Source Inductance
LD
Measured From the Drain Modified MOSFET
-
Lead, 2mm (0.08in) from Symbol Showing the
Package to Center of Die Internal Devices
LS
Measured From the Source Inductances D
-
Lead, 2mm (0.08in) From
Header to Source Bonding
LD
Pad
G
LS
TYP
-
-
-
-
-
-
1.0
0.8
8.0
15
10
8.0
5.0
2.0
3.0
135
60
16
4.0
6.0
MAX UNITS
-
V
4.0
V
25
µA
250
µA
-
A
±100 nA
1.500 Ω
-
S
15
ns
25
ns
15
ns
15
ns
7.5
nC
-
nC
-
nC
-
pF
-
pF
-
pF
-
nH
-
nH
Thermal Resistance Junction to Ambient RθJA Free Air Operation
S
-
-
120 oC/W
4-282
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