CR3EM Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC
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CR3EM Datasheet PDF : 5 Pages
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MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR3EM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IRRM
IDRM
VTM
VGT
VGD
IGT
IH
Rth (j-a)
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
Test conditions
Tj=125°C, VRRM applied
Tj=125°C, VDRM applied
Tc=25°C, ITM=10A, instantaneous value
Tj=25°C, VD=6V, IT=0.5A
Tj=125°C, VD=1/2VDRM
Tj=25°C, VD=6V, IT=0.5A
Tj=25°C, VD=12V
Junction to ambient
Limits
Min. Typ. Max.
—
—
0.1
—
—
0.1
—
—
1.6
—
—
1.5
0.2
—
—
—
—
30
25
45
—
—
—
120
Unit
mA
mA
V
V
V
mA
mA
°C/ W
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
102
7 Tc = 25°C
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
100
90
80
70
60
50
40
30
20
10
0
100 2 3 4 5 7 101 2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
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