2N5298 Просмотр технического описания (PDF) - Inchange Semiconductor
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Компоненты Описание
производитель
2N5298 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5294 2N5296 2N5298
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
2N5294
70
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5296
IC=0.1A ;IB=0
40
V
2N5298
60
VCEsat
VBE
ICEV
ICER
IEBO
Collector-emitter
saturation voltage
2N5294
2N5296
2N5298
IC=0.5A;IB=0.05A
IC=1.0A;IB=0.1A
IC=1.5A;IB=0.15A
2N5294
IC=0.5A ; VCE=4V
Base-emitter on voltage 2N5296
IC=1.0A ; VCE=4V
Collector cut-off current
Collector cut-off current
Emitter cut-off current
2N5298
2N5294/5298
2N5296
2N5294/5298
2N5294
2N5296/5298
IC=1.5A ; VCE=4V
VCE=65V;VBE=1.5V
TC=150℃
VCE=35V;VBE=1.5V
TC=150℃
VCE=50V;RBE=100Ω
TC=150℃
VEB=7V; IC=0
VEB=5V; IC=0
1.0
V
1.1
1.3
V
1.5
0.5
3.0
mA
2.0
5.0
0.5
2.0
mA
1.0 mA
2N5294
hFE
DC current gain
2N5296
2N5298
fT
Transition frequency
IC=0.5A ; VCE=4V
IC=1.0A ; VCE=4V
IC=1.5A ; VCE=4V
IC=0.2A ; VCE=4V
30
120
20
80
0.8
MHz
ton
Turn-on time
2N5294
2N5296
IC=0.5A;IB=0.05A;VCC=30V
IC=1.0A;IB=0.1A;VCC=30V
5.0 μs
toff
Turn-off time
2N5298
2N5294
2N5296
2N5298
IC=1.5A;IB=0.15A;VCC=30V
IC=0.5A;IB=0.05A;VCC=30V
IC=1.0A;IB=0.1A;VCC=30V
IC=1.5A;IB=0.15A;VCC=30V
15
μs
2
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