2N5296 Просмотр технического описания (PDF) - Inchange Semiconductor
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2N5296 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5294 2N5296 2N5298
DESCRIPTION
·With TO-220 package
·High power dissipation
APPLICATIONS
·Power amplifier and medium speed
switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
2N5294
VCBO
Collector-base voltage 2N5296
2N5298
2N5294
VCEO
Collector-emitter voltage 2N5296
2N5298
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
VALUE
80
60
80
70
40
60
7
4
2
36
150
-65~150
UNIT
V
V
V
A
A
W
℃
℃
MAX
3.47
UNIT
℃/W
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