2N5297 Просмотр технического описания (PDF) - Inchange Semiconductor
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2N5297 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5293 2N5295 2N5297
DESCRIPTION
·With TO-220 package
·High power dissipation
APPLICATIONS
·Power amplifier and medium speed
switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
导体 SYMBOL
PARAMETER
固电半 SEMICONDUCTOR 2N5293
VCBO
Collector-base voltage 2N5295
2N5297
INCHANG2N5293
VCEO
Collector-emitter voltage 2N5295
CONDITIONS
Open emitter
Open base
VALUE
80
60
80
70
40
UNIT
V
V
2N5297
60
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
4
A
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
TC=25℃
2
A
36
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
MAX
3.47
UNIT
℃/W
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