RMPA2451-58 Просмотр технического описания (PDF) - Raytheon Company
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RMPA2451-58 Datasheet PDF : 5 Pages
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RMPA2451-58
# 425430398 2.4-2.5 GHz GaAs MMIC
Power Amplifier
PRODUCT INFORMATION
Description
Raytheon RF Components’ RMPA2451-58 is a partially matched monolithic power amplifier in a
surface mount package for use in wireless applications in the 2.4 to 2.5 GHz ISM frequency band. The
amplifier may be biased for linear, class AB or class F for high efficiency applications. External
matching components are required to optimize the RF performance. The MMIC chip design utilizes
Raytheon RF Components’ 0.25µm power Pseudomorphic High Electron Mobility (PHEMT) process.
Features
38% Power Added Efficiency
29 dBm Typical Output Power
Small package outline: 0.28”x 0.28”x 0.07”
Low Power Mode: 0 dBm
Absolute
Ratings
Parameter
Symbol
Min
Positive Drain DC Voltage
Vd1,Vd2
0
Negative Gate DC Voltage
Vg1,Vg2
-5
Simultaneous Drain to Gate Voltage
Vd-Vg
RF Input Power (from 50 Ω source)
Pin
Drain Current, First Stage
Id1
Drain Current, Second Stage
Id2
Gate Current
Ig
Channel Temperature
Tc
Operating Case Temperature
Tcase
-40
Storage Temperature Range
Tstg
-40
Thermal Resistance (Channel to Case)
Rjc
Max
+8
0
+10
+10
75
525
5
175
85
125
33
Units
Volts
Volts
Volts
dBm
mA
mA
mA
°C
°C
°C
°C/Watt
Electrical
Characteristics1
Parameter
Frequency Range
Gain1
Output Power, P1dB1
Power Added
Efficiency
Min Typ Max Unit
Parameter
Min Typ Max Unit
2400
2500 MHz
28.5
33
dB
27
29
dBm
38
%
3rd order Intermod.
Product2
Drain Current (Id1 + Id2)
Gate Current (Ig1 + Ig2)
Input Return Loss (50W)
Low Power Mode, Pout3 0
-35
-27 dBc
430
mA
5 mA
2:1
dB
dBm
Notes:
1. Production Testing includes Gain, Output Power at 1-dB gain compression (P1dB) and Input Return Loss at Vd1 = Vd2 =
+5.0V; Vg1,Vg2 = -0.5V (nominal), adjust Vg1 and Vg2 to get Idq1 = 60 mA, Idq2 = 340 mA and at F = 2.45 GHz, at 250C.
2. Two tone 3rd order Output Intermodulation products (IM3) are measured with total output power level of 25dBm (tone
spacing is 1MHz).
3. Vg1, Vg2 tied together. Vd = 5V until Idq total = 45 mA, Pin = -10 dBm.
Other Parameters are guaranteed by Design Validation Testing (DVT).
www.raytheonrf.com
Characteristic performance data and specifications are subject to change
without notice.
Revised August 5, 2002
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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