2N4867A Просмотр технического описания (PDF) - New Jersey Semiconductor
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2N4867A Datasheet PDF : 1 Pages
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^e-mi-Conductoi ^Pi
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N4867, 2N4867A, 2N4868, 2N4868A, 2N4869, 2N4869A
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 2 5 ° C
Reverse Gate Source & Reverse Gate Drain Voltage
- 40 V
Gate Current
50 mA
Continuous Device Power Dissipation
SOOmW
Power Derating
1.7mW/°C
Storage Temperature Range
- 65°C to + 200°C
.. ^,~ ,
.
At 25 C free air temperature:
i Gate Source Breakdown Voltage
Gate Reverse Current
:
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
V(BR)GSS
l/~cc
GSS
j VGS(OFF)
IDSS
2N4867
2N4868
2N4867A
2N4868A
\c Electrical Characteristics
Max
2N4869
2N4869A
Min Max
!
|
j Mln
Unit
~ 40
~ 40
-40
V
- 0.25 i
^0.2F
'
-^
-i ---
!
-0.25!
1-0.25
i-0.25| nA
-0.25; pA
j - 0.7 - 2 - 1 f - 3 -1.8+ - 5 V
j 0.4 1.2 1
3
2.5 7.5 ^mA
r,
.,,.-
1
Process NJ1b
j
Max Min
lest Conditions
!i
'G = ~ i M^' VDS - 0v
!
VGS =- 3ov, %=0V !
1
Vpc = — 30V, Vnc = 0 V
VJJ
UO
VDS = 20V, ID = f pA
VDS = 20V VGS • 0v
i TA = 150°C
j
A
.
|
i
;
uynamic Flcr.trical Characteristics
Common Source Forward
Transconductance
9fs
Common Source Output Conductance gos
Common Source Input Capacitance Cjss
Common Source Reverse
Transfer Capacitance
Equivalent Short Circuit
: Input Noise Voltage
j
crss
1
\
N
!
Noise Figure
NF
I
70° , 200° 100°
;
1.5 ;
|
25 •
i
!5 ;
~~r '•'
\0
I
j 10 i
T
3000 1300 4000 pS
VDS = 20V, VGS = 0V
4
i
25
f-
5!
10 : pS
: 25 ! PF
• "i— • - H
5 ^ pF
VDS = 20V, VGS = 0V
VDS = 20V VGS = 0v
VDS = 20V VGS = 0V
i f=1kHz i
j
J
; f=1kHz J
: f = 1 MHZ j
I
]
' f = iMHz ;
20
10 j
^ 20 InV/VHzf VDS = 10V, VGS = 0V
10 inwVHZJ VDS = iov, VGS = 0V
1" f = 1 0 H z ]
i r"=ik~Hz
:
VDS = 10VVGs = 0V
] f=1kHz 1
(2N4867, 68, 69) RG = 20 kQ
(2N4867A, 68A, 69A) RG = 5 k
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