2N3649 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2N3649 Datasheet PDF : 3 Pages
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T O T - * , * - • ' SYMtOL
DC REVERSE OR
FORWARD BLOCKING
CURRENT (1)
C140F (2N3649)
C141F (2N3654)
C140A (2N3650)
C141A (2N3655)
C140B (2N3651)
C141B (2N3656)
C140C (2N3652)
C141C (2N3657)
C140D (2N3653)
C141D (2N3658)
IRQ Or
IFO
(.MARACTEKI bTltb ( cent.)
MIN. " fW. ^muufcv- tUNlTi ".<$v$$W&iitn
Tc = + 25°C
1.0
6.0 mAdc VRO r= Vro = 50V DC
1.0
6.0
mAdc VHO = Vro = 100V DC
—
1.0
6.0 mAdc VRO = Vro - 200V DC
1.0
5.5 mAdc VRO = VFO = 300V DC
1.0
4.0 mAdc VRO = VFO = 400V DC
C140,C141
DC REVERSE OR
FORWARD BLOCKING
CURRENT (1)
C140F (2N3649)
f t AH? /9VTOAKA\A '(2N3650)
C141A (2N3655)
C140B (2N3651)
C141B (2N3656)
C140C (2N8652)
C141C (2N3657)
C140D (2N3653)
C141D (2N3658)
Inoor
IFQ
—
"S..
—
, "",'. :,"
**
'
*'
\
5.0 6.0* mAdc VM = VTO = 50VDC itC ...-..;.;-: \'
6.0 6.0* mAdc
6.0 6.0* 'mAdc
'8
5.0 5.6* mAdc v«>a:Vw=:3oovi)c *'<- •^•-i'i':'c '
3.5 4.0* mAdc
GATE TRIGGER
CURRENT
IOT
80 180 mAdc
—
RL = 4 ohms
GATE TRIGGER
VOLTAGE
—
150 500* mAdc
Ri, = 2 ohms
VOT
1.5 3.0
Vdc : , To= +26"C, V« ss 6 Vdc, " -.
—
0.25* —
Vdc To = +120-C, V« = Rated,
—
RL = 200ohms '• \c = -65'C, Vrz= 6Vdc,
—
2.0 4.5* Vdc
RL = 2 ohms ' , '
PEAK ON-VOLTAGE
Vr
—
1.8 2.05* V Tr - +25° C, IK« = 25A
1msec. pulse. Duty cycle = 1 %
HOLDING CURRENT • = IBO
' "K'f.fi
;•
' *"
«
.\; ~. „_ J«;;. ,. :•>"'_„ .],.••-,
~•
,;
EFFECTIVE THERMAL
«J-C
—
RESISTANCE (DC)
RATE OF RISE OF
FORWARD BLOCKING
VOLTAGE THAT WILL
NOT TURN ON SCR
dv/dt 200*
•76 '_
•*" *". * '
l&U * . • £Wl#v
0.85 1.7*
**' • '* * >il
jc^it; Z^oha^^^c^j^^A^
°C/watt
-" *"•
""""* volts/ Tc =s +120*C, Gate open circuited. ' •
. Vro = Rated •••,.• :_:- ,,, ••'y'-t%-*u>ft^.
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