2N2906A Просмотр технического описания (PDF) - Microsemi Corporation

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2N2906A

RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR

Microsemi Corporation 

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

TECHNICAL DATA SHEET

UB

Dimensions

Symbol

Inches

Millimeters

Note

Min Max Min Max

BH

.046 .056 1.17 1.42

BL

.115 .128 2.92 3.25

BW

.085 .108 2.16 2.74

CL

.128

3.25

CW

.108

2.74

LL1

.022 .038 0.56 0.96

LL2

.017 .035 0.43 0.89

Dimensions

Symbol

Inches

Millimeters Note

Min Max Min Max

LS1

.036 .040 0.91 1.02

LS2

.071 .079 1.81 2.01

LW

.016 .024 0.41 0.61

r

.008

.203

r1

.012

.305

r2

.022

.559

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.

4. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

FIGURE 3. Physical dimensions, surface mount (UB version)

T4-LDS-0055 Rev. 4 (100247)

Page 5 of 6

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