2MBI100HB-120-50 Просмотр технического описания (PDF) - Fuji Electric
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2MBI100HB-120-50 Datasheet PDF : 6 Pages
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2MBI100HB-120-50
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25oC / chip
250
15V 12V
200
VGE=20V
10V
150
100
8V
50
0
012345678
Collector-Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
250
200
Tj=25oC Tj=125oC
150
100
50
0
012345678
Collector-Emitter voltage : VCE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f=1MHz, Tj=25 oC
100.0
Cies
10.0
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125oC / chip
250
15V 12V
200
VGE=20V
10V
150
100
8V
50
0
012345678
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25oC / chip
10
8
6
4
Ic=200A
Ic=100A
Ic=50A
2
0
5
10
15
20
25
Gate-Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=100A, Tj=25oC
VCE
VGE
1.0
Coes
Cres
0.1
0
0
10
20
30
0
Collector-Emitter voltage : VCE [ V ]
2
100
200
300
Gate charge : Qg [ nC ]
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