29LV160TE Просмотр технического описания (PDF) - Fujitsu

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29LV160TE

FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT

Fujitsu 

MBM29LV160TE/BE-70/90/12

s FUNCTIONAL DESCRIPTION

• Read Mode

The MBM29LV160TE/BE has two control functions which must be satisfied in order to obtain data at the outputs.

CE is the power control and should be used for a device selection. OE is the output control and should be used

to gate data to the output pins if a device is selected.

Address access time (tACC) is equal to the delay from stable addresses to valid output data. The chip enable

access time (tCE) is the delay from stable addresses and stable CE to valid data at the output pins. The output

enable access time is the delay from the falling edge of OE to valid data at the output pins. (Assuming the

addresses have been stable for at least tACC - tOE time.) When reading out a data without changing addresses

after power-up, it is necessary to input hardware reset or to change CE pin from “H” or “L”.

• Standby Mode

There are two ways to implement the standby mode on the MBM29LV160TE/BE devices. One is by using both

the CE and RESET pins; the other via the RESET pin only.

When using both pins, a CMOS standby mode is achieved with CE and RESET inputs both held at VCC ±0.3 V.

Under this condition the current consumed is less than 5 µA max. During Embedded Algorithm operation, VCC

Active current (ICC2) is required even CE = “H”. The device can be read with standard access time (tCE) from

either of these standby modes.

When using the RESET pin only, a CMOS standby mode is achieved with the RESET input held at VSS ±0.3 V

(CE = “H” or “L”). Under this condition the current consumed is less than 5 µA max. Once the RESET pin is

taken high, the device requires tRH of wake up time before outputs are valid for read access.

In the standby mode, the outputs are in the high-impedance state, independent of the OE input.

• Automatic Sleep Mode

There is a function called automatic sleep mode to restrain power consumption during read-out of

MBM29LV160TE/BE data. This mode can be used effectively with an application requesting low power con-

sumption such as handy terminals.

To activate this mode, MBM29LV160TE/BE automatically switches itself to low power mode when addresses

remain stable for 150 ns. It is not necessary to control CE, WE, and OE in this mode. During such mode, the

current consumed is typically 1 µA (CMOS Level).

Standard address access timings provide new data when addresses are changed. While in sleep mode, output

data is latched and always available to the system.

• Output Disable

If the OE input is at a logic high level (VIH), output from the device is disabled. This will cause the output pins to

be in a high-impedance state.

• Autoselect

The Autoselect mode allows the reading out of a binary code from the device and will identify its manufacturer

and type. The intent is to allow programming equipment to automatically match the device to be programmed

with its corresponding programming algorithm. The Autoselect command may also be used to check the status

of write-protected sectors. (See Tables 4.1 and 4.2.) This mode is functional over the entire temperature range

of the device.

To activate this mode, the programming equipment must force VID (11.5 V to 12.5 V) on address pin A9. Two

identifier bytes may then be sequenced from the devices outputs by toggling address A0 from VIL to VIH. All

addresses are DON’T CARES except A0, A1, and A6 (A-1). (See Table 2 or Table 3.)

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