MX29F1610MC-12 Просмотр технического описания (PDF) - Macronix International
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MX29F1610MC-12 Datasheet PDF : 37 Pages
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MX29F1610
READ/RESET COMMAND
The read or reset operation is initiated by writing the
read/reset command sequence into the command
register. Microprocessor read cycles retrieve array
data from the memory. The device remains enabled for
reads until the CIR contents are altered by a valid
command sequence.
The device will automatically power-up in the read/reset
state. In this case, a command sequence is not required
to read data. Standard microprocessor read cycles will
retrieve array data. This default value ensures that no
spurious alteration of the memory content occurs during
the power transition. Refer to the AC Read
Characteristics and Waveforms for the specific timing
parameters.
The MX29F1610 is accessed like an EPROM. When
CE and OE are low and WE is high the data stored at the
memory location determined by the address pins is
asserted on the outputs. The outputs are put in the high
impedance state whenever CE or OE is high. This dual
line control gives designers flexibility in preventing bus
contention.
CE stands for the combination of CE1 and CE2 in 48-pin
TSOP package. CE stands for CE1 in 44-pin SOP
package.
Note that the read/reset command is not valid when
program or erase is in progress.
PAGE PROGRAM
To initiate Page program mode, a three-cycle command
sequence is required. There are two " unlock" write
cycles. These are followed by writing the page program
command-A0H.
Any attempt to write to the device without the three-
cycle command sequence will not start the internal
Write State Machine(WSM), no data will be written to
the device.
After three-cycle command sequence is given, a
byte(word) load is performed by applying a low pulse on
the WE or CE input with CE or WE low (respectively)
and OE high. The address is latched on the falling edge
of CE or WE, whichever occurs last. The data is latched
by the first rising edge of CE or WE. Maximum of 128
bytes of data may be loaded into each page by the same
procedure as outlined in the page program section
below.
BYTE-WIDE LOAD/WORD-WIDE LOAD
Byte(word) loads are used to enter the 128 bytes(64
words) of a page to be programmed or the software
codes for data protection. A byte load(word load) is
performed by applying a low pulse on the WE or CE
input with CE or WE low (respectively) and OE high.
The address is latched on the falling edge of CE or WE,
whichever occurs last. The data is latched by the first
rising edge of CE or WE.
Either byte-wide load or word-wide load is
determined(Byte = VIL or VIH is latched) on the falling
edge of the WE(or CE) during the 3rd command write
cycle.
PROGRAM
Any page to be programmed should have the page in
the erased state first, i.e. performing sector erase is
suggested before page programming can be performed.
The device is programmed on a page basis. If a
byte(word) of data within a page is to be changed, data
for the entire page can be loaded into the device. Any
byte(word) that is not loaded during the programming of
its page will be still in the erased state (i.e. FFH). Once
the bytes of a page are loaded into the device, they are
simultaneously programmed during the internal
programming period. After the first data byte(word) has
been loaded into the device, successive bytes(words)
are entered in the same manner. Each new byte(word)
to be programmed must have its high to low transition on
WE (or CE) within 30us of the low to high transition of
P/N:PM0260
10
This Material Copyrighted by Its Respective Manufacturer
REV. 2.3, APR. 16, 1999
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