20ETS12FP Просмотр технического описания (PDF) - Vishay Semiconductors
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20ETS12FP Datasheet PDF : 7 Pages
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20ETS..FPPbF High Voltage Series
Input Rectifier Diode, 20 A Vishay High Power Products
150
20ETS.. Series
125
100
180°
120°
75
90°
60°
30°
50
Ø
Conduction angle
25
0
4
8
12
16
20
24
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
150
20ETS.. Series
125
100
Ø
Conduction period
75 360°
180°
120°
50
90°
60°
30°
25
0
5 10 15 20 25 30 35
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
30
180°
120°
25
90°
60°
30°
20
RMS limit
15
10
Ø
Conduction angle
5
20ETS.. Series
TJ = 150 °C
0
0
4
8
12
16
20
24
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
35
DC
30
180°
120°
90°
25
60°
30°
20
RMS limit
15
10
Ø
Conduction period
5
20ETS.. Series
TJ = 150 °C
0
0
5
10
15
20
25
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
300
At any rated load condition and with
rated VRRM applied following surge.
250
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
200
150
100
20ETS.. Series
50
1
10
100
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
300
Maximum non-repetitive surge current
versus pulse train duration.
250
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
200
150
100
20ETS.. Series
50
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 94339
Revision: 04-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
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